Fujitsu Laboratories has announced the development of world’s first transmitter/receiver module using gallium-nitride (GaN) high electron mobility transistor (HEMT) technology which is capable of operating in a wide bandwidth range of C-Ku band radio frequencies over 6 to 18 GHz. The new technology would make it possible to integrate multiple types of communication equipment, which each currently operating at a different frequency range into a single module, resulting in a more compact and lighter radar equipment and wireless communication systems. 
Among some of the features on this newly developed T/R modules are its improved heat dissipation with heat sink which is built into T/R module’s multilayer alumina ceramic substrate, lower signal losses in the signal input/output terminal portion through introduction of ultra-broadband terminal structure, and development of compact LNA that uses GAN HEMT.
